Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-08-04
2010-10-19
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S292000, C257S293000, C257S439000, C257S461000, C257S463000, C257S464000, C257S465000, C257SE31052, C257SE31053, C257SE31063, C257SE31069, C257SE31071, C257SE31073, C257SE31076, C257SE31079, C257SE31082, C257SE31096, C257SE31104, C257SE31115, C257SE33076
Reexamination Certificate
active
07816755
ABSTRACT:
A pixel space is narrowed without increasing PN junction capacitance. A photoelectric conversion device includes a plurality of pixels arranged therein, each including a first impurity region of a first conductivity type forming a photoelectric conversion region, a second impurity region of a second conductivity type forming a signal acquisition region arranged in the first impurity region, a third impurity region of the first conductivity type and a fourth impurity region of the first conductivity type are arranged in a periphery of each pixel for isolating the each pixel, the fourth impurity region is disposed between adjacent pixels, and an impurity concentration of the fourth impurity region is smaller than an impurity concentration of the third impurity region.
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Kochi Tetsunobu
Yamazaki Kazuo
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Soward Ida M
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