Photoelectric conversion device with graded band gap and carrier

Details Photoelectric conversion device with graded band gap and carrier Photoelectric conversion device with graded band gap and carrier

1997-06-03

1999-02-09

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257 21, 257 53, 257 55, 257191, H01L 310312, H01L 310376, H01L 31107

Patent

active

058698515

ABSTRACT:
A photoelectric conversion device wherein, in order to realize a photoelectric conversion device with high multiplication factors and excellent response speeds even under the application of low voltage by eliminating spike and notch in the hetero junction, a light absorbing layer (404) and a carrier multiplication layer (403) are made of non-single crystalline materials, said carrier multiplication layer (403) being comprised of a plurality of layers (411 to 414) with the forbidden band width changed continuously, and wherein the difference between the Fermi level and the vacuum energy level of said carrier multiplication layer (403) in the neighborhood of hetero junction is made substantially constant.

REFERENCES:
patent: 4751559 (1988-06-01), Sugawa et al.
patent: 4810896 (1989-03-01), Tanaka et al.
patent: 4814846 (1989-03-01), Matsumoto et al.
patent: 4866293 (1989-09-01), Nakamura et al.
patent: 4962412 (1990-10-01), Shinohara et al.
patent: 5260560 (1993-11-01), Yamanobe et al.
Patent Abstracts of Japan, vol. 14, No. 187 (E-917), Apr. 16, 1990.
IEEE Electron Device Letters, vol. EDL-3, Mar. 1992, pp. 71-73.

Affiliated with

Also associated with

Rating

Photoelectric conversion device with graded band gap and carrier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoelectric conversion device with graded band gap and carrier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoelectric conversion device with graded band gap and carrier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1951241