Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1988-08-16
1993-02-16
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257751, 257766, H01L 2350, H01L 2946, H01L 2916
Patent
active
051875632
ABSTRACT:
A photoelectric conversion device is caused to have a quick response against incident light by designing the photosensitive portion in such a way that photocurrent does flow only in the direction perpendicular to a semiconductor layer. The device is comprised of the semiconductor and a pair of electrodes so that the layer and the electrodes have the same area and the same shape.
REFERENCES:
patent: 4405915 (1983-09-01), Komatsu et al.
patent: 4446364 (1984-05-01), Hayashi et al.
patent: 4612559 (1986-09-01), Hitotsuyanagi
patent: 4765845 (1988-08-01), Takada et al.
Jackson, Jr. Jerome
Semiconductor Energy Laboratory Co,. Ltd.
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