Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1994-11-30
1996-06-18
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257257, 257258, 257291, 257462, 307117, 307412, H01L 2980, H01L 31112
Patent
active
055280595
ABSTRACT:
An amplification-type photoelectric conversion device utilizes a JFET and is capable of amplifying charges generated by photoelectric conversion with a high amplification factor and improves the S/N ratio. The device is provided with a drive circuit for respectively applying driving signals to a source region, a drain region and a gate electrode of the JFET. The drive circuit has a first signal mode for accumulating charges generated by incident light on the JFET, and a second signal mode for causing the flow of current between the source and the drain and raising a potential difference between the source and the drain to a high level thereby causing an impact-ionization effect corresponding to an amount of the charges accumulated by the first mode to accumulate the resulting charges. A signal output corresponding to a total amount of the charges accumulated by the first and second modes is delivered from the drain.
REFERENCES:
patent: 5043783 (1991-08-01), Matsumoto et al.
patent: 5155574 (1992-10-01), Yamaguchi
patent: 5298778 (1994-03-01), Yonemond
Mintel William
Nikon Corporation
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