Photoelectric conversion device manufacturing method

Metal working – Method of mechanical manufacture – Assembling or joining

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29580, 29583, 29591, 219121LH, 427 74, H01L 3118, H01L 2714

Patent

active

045862419

ABSTRACT:
A manufacturing method of a photoelectric conversion device which comprises a plurality n of semiconductor elements U.sub.1 to U.sub.n formed on a substrate side by side and connected in series one after another. On the substrate a first conductive layer is formed and then, it is subjected to first laser beam scanning to form grooves G.sub.1 to G.sub.n-1 and first electrodes E.sub.1 to E.sub.n respectively separated by the grooves G.sub.1 to G.sub.n-1. Next, on the substrate an N (or P) --I-- P (or N) type non-single-crystal semiconductor laminate member is formed to cover the grooves G.sub.1 to G.sub.n-1 and the electrodes E.sub.1 to E.sub.n and then, the laminate member is subjected to second laser beam scanning to form grooves O.sub.1 to O.sub.n-1 respectively extending into the first electrodes E.sub.1 to E.sub.n-1 and N (or P) --I-- P (or N) type non-single-crystal semiconductor laminate member Q.sub.1 to Q.sub.n. Next, a second conductive layer is formed to continuously extend on the laminate member Q.sub.1 to Q.sub.n and extends into the grooves Q.sub.1 toQ.sub.n-1 and then, the second conductive layer is subjected to the third laser beam scanning to form isolating portions H.sub.1 to H.sub.n-1 and electrodes F.sub.1 to F.sub.n respectively connected to the first electrodes E.sub.1 to E.sub.n-1 through the coupling portions K.sub.1 to K.sub.n-1. The second and/or third laser beam scanning steps are followed by an etch using a gas such as hydrogen fluoride, hydrogen chloride or a Freon gas or a liquid such as fluoric acid, hydrochloric acid, or Freon liquid.

REFERENCES:
patent: 4292092 (1981-09-01), Hanak
patent: 4315096 (1982-02-01), Tyan et al.

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