Photoelectric conversion device, its manufacturing method,...

Details Photoelectric conversion device, its manufacturing method,... Photoelectric conversion device, its manufacturing method,...

2005-12-28

2009-06-02

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

active

07541211

ABSTRACT:
It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°<φ≦45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle α with the two plane direction within a range of 0°<α<90°.

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patent: 2005/0006676 (2005-01-01), Watanabe
patent: 2005/0088556 (2005-04-01), Han
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