Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-05-02
2009-08-25
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S258000, C257S440000, C257SE27134, C257SE31054
Reexamination Certificate
active
07579633
ABSTRACT:
A photoelectric conversion device includes a photoelectric conversion layer that is stacked on a semiconductor substrate and that has first, second, and third photoelectric conversion regions, and first, second, and third dividing regions. The first dividing region is formed at a predetermined depth from a surface of the photoelectric conversion layer in the first photoelectric conversion region, and divides the first photoelectric conversion region into a first surface side region closer to the surface thereof and a first substrate side region closer to the semiconductor substrate. The first dividing region has a through hole. The second dividing region is formed at substantially the same depth as the first dividing region or at a shallower depth than the first dividing region in the second photoelectric conversion region. The third dividing region is formed at a shallower depth than the second dividing region in the third photoelectric conversion region.
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Chiu Tsz K
Rabin & Berdo P.C.
Rohm & Co., Ltd.
Wilczewski M.
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