Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1993-11-12
1995-09-26
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257 16, 257 17, 257 21, 257 22, 257185, 257187, 257438, 257458, 257603, H01L 2714, H01L 3100
Patent
active
054536294
ABSTRACT:
A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.
REFERENCES:
patent: 4476477 (1984-10-01), Capasso et al.
IEEE Electron Device Letters, vol. EDL-3, No. 3, Mar. 1982, pp. 71-73, G. F. Williams et al., "The Graded Bandgap Multilayer Avalanche Photodiode: A New Low-Noise Detector".
Gofuku Ihachiro
Kozuka Hiraku
Tabata Izumi
Yamanobe Masato
Canon Kabushiki Kaisha
Ngo Ngan V.
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