Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-16
2011-08-16
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S066000, C257S444000, C257S446000, C257S466000, C257SE27132
Reexamination Certificate
active
07999265
ABSTRACT:
The photoelectric conversion device includes: a photoelectric conversion element in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked in this order; and a thin film transistor (TFT) connected to the first electrode of the photoelectric conversion element via a contact hole, wherein the photoelectric conversion layer including a first photoelectric conversion layer disposed at a location which does not overlap with the contact hole and a second photoelectric conversion layer disposed at a location which overlaps with the contact hole, the first photoelectric conversion layer and the second photoelectric conversion layer are separated from each other by a separation groove, and the second electrode is selectively formed on the first photoelectric conversion layer, and the photoelectric conversion element is formed by the first electrode, the first photoelectric conversion layer, and the second electrode.
REFERENCES:
patent: 7663080 (2010-02-01), Tsai
patent: A-11-121731 (1999-04-01), None
patent: A-2008-85029 (2008-04-01), None
patent: A-2008-122659 (2008-05-01), None
Ho Tu-Tu V
Oliff & Berridg,e PLC
Seiko Epson Corporation
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