Photoelectric conversion device and solid-state imaging device

Details Photoelectric conversion device and solid-state imaging device Photoelectric conversion device and solid-state imaging device

2011-05-31

2011-05-31

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S414000, C257S431000, C257SE31001

Reexamination Certificate

active

07952156

ABSTRACT:
A photoelectric conversion device comprising a photo-electric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is made incident from an upper part of the second electrode layer into the photoelectric conversion layer; the photoelectric conversion layer generates a charge containing an electron and a hole corresponding to the incident light from the upper part of the second electrode layer; and the first electrode layer works as an electrode for extracting the hole.

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