Photoelectric conversion device and method of producing the...

Details Photoelectric conversion device and method of producing the... Photoelectric conversion device and method of producing the...

2011-03-29

2011-03-29

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S053000, C257S458000, C257SE31061

Reexamination Certificate

active

07915612

ABSTRACT:
A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016to 2.0×1017cm−3.

REFERENCES:
patent: 2000-183377 (2000-06-01), None
patent: 2000-252495 (2000-09-01), None
patent: 2002-9313 (2002-01-01), None
patent: 2003-142705 (2003-05-01), None
patent: 2004-6537 (2004-01-01), None
Japanese Office Action mailed Mar. 17, 2009 in corresponding Japanese application 2007-018413.
Japanese Office Action mailed Sep. 29, 2009 in corresponding Japanese application 2009-119018.

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