Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2005-01-18
2005-01-18
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S759000, C257S791000
Reexamination Certificate
active
06844568
ABSTRACT:
There is disclosed a photoelectric conversion device which is manufactured by depositing numerous crystalline semiconductor particles of one conductivity type on a substrate having an electrode of one side to join the crystalline semiconductor particles to the substrate, interposing an insulator among the crystalline semiconductor particles, forming a semiconductor layer of the opposite conductivity type over the crystalline semiconductor particles, and connecting an electrode to the semiconductor layer of the opposite conductivity type, in which the insulator comprises a mixture or reaction product of polysiloxane and polycarbosilane. The insulator interposed among the crystalline semiconductor particles is free from defects such as cracking and peeling, so that a low cost photoelectric conversion device with high reliability can be provided.
REFERENCES:
patent: 6784512 (2004-08-01), Yamaguchi et al.
patent: 20040000715 (2004-01-01), Interrante et al.
patent: 52-23273 (1977-02-01), None
Arimune Hisao
Kyoda Takeshi
Miura Yoshio
Seki Yoji
Flynn Nathan J.
Hogan & Hartson LLP
Kyocera Corporation
Sefer Ahmed N.
LandOfFree
Photoelectric conversion device and manufacturing process... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photoelectric conversion device and manufacturing process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoelectric conversion device and manufacturing process... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3426515