Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-02-10
2009-02-17
Elms, Richard (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S428000, C257S431000, C257SE33046, C257SE31126
Reexamination Certificate
active
07492028
ABSTRACT:
A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.
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Chinese Office Action , Patent Application No. 200610009063.9, dated Dec. 12, 2008, (19 pages) (English translation).
Arao Tatsuya
Nishi Kazuo
Sugawara Yuusuke
Takahashi Hironobu
Bernstein Allison P
Elms Richard
Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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