Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-04-27
2010-06-15
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S292000, C257S348000, C257SE27132, C257SE27133
Reexamination Certificate
active
07737519
ABSTRACT:
The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.
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Ichikawa Takeshi
Mishima Ryuichi
Tamura Seiichi
Yuzurihara Hiroshi
Canon Kabushiki Kaisha
Chiu Tsz K
Fitzpatrick ,Cella, Harper & Scinto
Smith Zandra
LandOfFree
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