Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-06-06
1997-02-04
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257185, 20419225, H01L 310376
Patent
active
056001525
ABSTRACT:
In order to reduce the dark current due to an interfacial defect and effect higher sensitivity, there is disclosed a manufacturing method for a photoelectric conversion device having a light absorbing layer and a carrier multiplying layer at least having a non-single crystalline semiconductor, the carrier multiplying layer being composed of a plurality of graded layers of which the forbidden band width continuously changes from the minimum forbidden band width Eg1 to the maximum forbidden band width Eg2, wherein there is an energy step sufficient to avalanche multiply the carriers between a region of the maximum forbidden band width Eg2 and a region of the minimum forbidden band width Eg1 adjacent thereto, when an electric field is applied, characterized in that after the deposition of any one of the region of the minimum forbidden band width Eg1 and the region of the maximum forbidden band width Eg2, the plasma treatment is performed with a gas at least containing oxygen or nitrogen, and further the other region is deposited, or an oxide or nitride region is provided between the graded layers.
REFERENCES:
patent: 4843451 (1989-06-01), Watanabe et al.
patent: 5282993 (1994-02-01), Kary
patent: 5453629 (1995-09-01), Gofuku et al.
Kozuka Hiraku
Sugawa Shigetoshi
Canon Kabushiki Kaisha
Larkins William D.
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