Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-04-12
2005-04-12
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S186000, C257S187000, C257S192000, C257S194000, C257S199000, C257S201000, C257S219000
Reexamination Certificate
active
06878977
ABSTRACT:
In a photoelectric conversion device comprising a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the first semiconductor region, and a wiring for electrically connecting the second semiconductor region to a circuit element located outside the pixel region, a shield is provided on the light-incident side of the wiring, via an insulator in such a way that it covers at least part of the wiring and also the shield comprises a conductor whose potential stands fixed.This photoelectric conversion device may hardly be affected with low-frequency radiated noises as typified by power-source noise.
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Kaihotsu Takahiro
Kozuka Hiraku
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Louie Wai-Sing
Pham Long
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