Photoelectric conversion device and image sensor

Details Photoelectric conversion device and image sensor Photoelectric conversion device and image sensor

1993-09-14

1994-10-04

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257222, 257443, H01L 2714, H01L 3100

Patent

active

053529219

ABSTRACT:
Image sensors using thin films and having a higher production yield, low production cost and higher reading resolution are provided. In a photoelectric conversion device having a thin film semiconductor layer is provided that performs photoelectric conversion with a first electrode structured mainly by a metallic material on a light transmitting insulating substrate or an insulating film and a second electrode on the thin film semiconductor layer. A thin insulating film is formed at least partially between the second electrode and the thin film semiconductor layer or the thin film semiconductor layer and the first electrode.

REFERENCES:
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patent: 4811069 (1989-03-01), Kakinuma et al.
patent: 4831429 (1989-05-01), Nakashima et al.
patent: 4855802 (1989-08-01), Kato
patent: 4943839 (1990-07-01), Kumano et al.
patent: 4997773 (1991-03-01), Nobue et al.
patent: 5017987 (1991-05-01), Nanjoh et al.
patent: 5043784 (1991-08-01), Yamamoto et al.
patent: 5140398 (1992-08-01), Matsuda et al.

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