Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2008-12-17
2010-12-14
Whipkey, Jason (Department: 2622)
Television
Camera, system and detail
Solid-state image sensor
C257S231000, C348S308000
Reexamination Certificate
active
07852390
ABSTRACT:
It is a principle object of the present invention to reduce a voltage drop of a common power supply wiring in a plurality of amplification circuits to suppress crosstalk generated in other signal output lines. A photoelectric conversion device includes: a plurality of pixels each having a photoelectric conversion area; a plurality of signal output lines through which electrical signals are to be read out from the plurality of pixels; and a plurality of amplification circuits provided in correspondence to the plurality of signal output lines for amplifying the electrical signals, respectively, the plurality of amplification circuits including at least one constant current circuit portion and being disposed in a predetermined direction of repetitive dispersion, in which a constant current circuit portion includes at least a source grounded field effect transistor (the gate electrode is designated by reference symbol124G), and a direction (X-axis direction) of a channel length of the source grounded field effect transistor is different from the direction of repetitive disposition of the amplification circuits.
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Kleinfelder, Lim, Liu, and El Gamal, “A 10000 Frames/s CMOS Digital Pixel Sensor”, IEEE Journal of Solid State Circuits, vol. 36, No. 12, Dec. 2001.
Hiyama Hiroki
Okita Akira
Takada Hideaki
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hogue Dennis
Whipkey Jason
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