Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2003-12-02
2008-11-25
Ye, Lin (Department: 2622)
Television
Camera, system and detail
Solid-state image sensor
C348S300000
Reexamination Certificate
active
07456888
ABSTRACT:
In a photoelectric conversion device with a photoelectric conversion region for accumulating electric charges that correspond to incident light and an amplifying filed effect transistor into which a signal charge from the photoelectric conversion region is inputted, the photoelectric conversion region is surrounded by a potential barrier region (a selectively oxidized film and a channel stopper), a nick region (overflow channel) is formed in a part of the potential barrier region, and a drain region of the field effect transistor that has the same conductivity type as the photoelectric conversion region is placed next to the nick region. Thus excess carriers are prevented from flowing into adjacent pixels or other floating regions.
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Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hsu Amy
Ye Lin
LandOfFree
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