Photoelectric conversion device

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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357 2, 357 30, 357 88, 357 90, 136255, H01L 3106

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active

045814767

ABSTRACT:
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickness direction of the I-type layer.

REFERENCES:
M. Moller et al, Conference Record, 16th IEEE Photovoltaic Specialists Conf. (Sep. 1982) pp. 1376-1380.
"Investigation of the Hydrogen and Impurity Contents of Amorphous Silicon by Secondary Ion Mass Spectrometry", Solar Cells, vol. 2 (1980) pp. 365-376.

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