Photoelectric conversion device

Details Photoelectric conversion device Photoelectric conversion device

1997-02-25

2000-05-16

Garber, Wendy

Television

Camera, system and detail

Combined image signal generator and general image signal...

257229, H04N 5217

Patent

active

060644311

ABSTRACT:
This invention provides an element having a skimming charge transfer function in an X-Y address type photoelectric conversion device using, e.g., a CMOS sensor, and a photoelectric conversion device, which accumulates photoelectric signal charges produced by a photoelectric conversion element in a control electrode (gate) of a MOS transistor so as to obtain a signal with a high S/N ratio by removing signal components produced by background radiation without using any CCD as an accumulation means of skimming charges, has a skimming electrode for transferring skimming charges of those produced by the photoelectric conversion element, an n.sup.+ -type region for accumulating the transferred skimming charges, a MOS transistor for reading out potential changes caused by the skimming charges, and a circuit for automatically controlling the amount of skimming charges to be transferred.

REFERENCES:
patent: 4743959 (1988-05-01), Frederiksen
patent: 4866496 (1989-09-01), Audier
patent: 5003565 (1991-03-01), Yoshida
patent: 5146302 (1992-09-01), Kumada
patent: 5326996 (1994-04-01), McNutt
patent: 5345266 (1994-09-01), Denyer
"Charge Skimming Transfer Scheme", IEEE trans. Electron., vol. ED-29, p. 3, 1982.
Chow et al., "Hybrid Infrared Focal-Plane Arrays, " I.E.E.E. Trans. on Electron Devices, vol. ED-29, No. 1, pp. 3-13, Jan. 1982.

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