Photoelectric conversion device

Details Photoelectric conversion device Photoelectric conversion device

1989-03-28

1990-12-18

Jackson, Jr., Jerome

357 4, 357 32, 357237, H01L 2714, H01L 2978

Patent

active

049790072

ABSTRACT:
An image sensor including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.

REFERENCES:
patent: 4332174 (1982-06-01), Suzuki et al.
patent: 4432247 (1984-02-01), Takeno et al.
patent: 4461956 (1984-07-01), Hatanaka
patent: 4511877 (1985-04-01), Nishikawa et al.
patent: 4628296 (1986-12-01), Kitagawa et al.
patent: 4630491 (1986-12-01), Kitagawa et al.

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