Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1993-10-26
2000-10-03
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257458, H01L 2906, H01L 3900, H01L 31075, H01L 31105
Patent
active
061276928
ABSTRACT:
A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.
REFERENCES:
patent: 4887134 (1989-12-01), Saito et al.
patent: 4933731 (1990-06-01), Kimura
patent: 4980736 (1990-12-01), Takasaki et al.
patent: 5023685 (1991-06-01), Bethea et al.
Jwo et al, IEEE Trans-on Electron Devices, vol. 35, No. 8, Aug. 1988, pp. 1279-1283.
"Amorphous Silicon/Silicon Carbide Superlattice Avalanche Photodiodes" by Shin-Chering Jwo et al.; IEEE Transactions on Electron Devices vol. 35; (1988) Aug., No. 8, New York, N.Y., USA; pp. 1279-1283.
Gofuku Ihachiro
Ohmi Kazuaki
Osada Yoshiyuki
Sugawa Shigetoshi
Yamanobe Masato
Canon Kabushiki Kaisha
Meier Stephen
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