Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-06-07
1998-03-03
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 21, 257186, 257438, 257458, 2503384, H01L 29165, H01L 2904, H01L 3107
Patent
active
057238774
ABSTRACT:
A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.
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patent: 5101255 (1992-03-01), Ishioka
"Multiplication Noise in Uniform Avalance Diodes" by R. J. McIntyre; IEEE Transactions on Electron Devices, Jan. 1966 vol. ED-13, No. 1, pp. 164-168.
"The Graded Bandgap Multilayer Avalance Photodiode: A New Low-Noise Detector" by G.F. William et al.; IEEE Electron Device Letters Mar. 1982, vol. EDL-3, No. 3, pp. 71-73.
"Amorphous Silicon/Silicon Carbide Superlattice Avalance Photodiodes" by Shin-Chering Jwo et al.; IEEE Transactions on Electron Devices, vol. 35; (1988) Aug., No. 8, New York, N.Y., USA; pp. 1279-1283.
Gofuku Ihachiro
Ohmi Kazuaki
Osada Yoshiyuki
Sugawa Shigetoshi
Yamanobe Masato
Canon Kabushiki Kaisha
Jackson, Jr. Jerome
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