Photoelectric cell having first and second insulated gates on fi

Details Photoelectric cell having first and second insulated gates on fi Photoelectric cell having first and second insulated gates on fi

1996-11-01

1997-12-16

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257292, 257232, 257461, 257462, H01L 27148, H01L 3106

Patent

active

056988745

ABSTRACT:
A photoelectric cell of the present invention comprises a first conduction type first semiconductor region; a second conduction type second semiconductor region formed in the surface of the first semiconductor region so as to form a pn junction together with the first semiconductor region; a first conductive region formed in the surface of the first semiconductor region so as to be separated from the second semiconductor region and to form a first rectifier junction together with the first semiconductor region; a second conductive region formed in the surface of the first semiconductor region so as to be separated from the first conductive region and to be electrically connected to the second semiconductor region to form a second rectifier junction together with the first semiconductor region; a third conductive region formed in the surface of the second semiconductor region so as to form a third rectifier junction together with the second semiconductor region; a first insulated gate formed on a first channel forming region in the surface of the first semiconductor region defined between the first conductive region and the second conductive region on and a second insulated gate formed on a second channel forming region in the surface of the second semiconductor region defined between the first semiconductor region and the third conductive region.

REFERENCES:
patent: 4831426 (1989-05-01), Kimata et al.
patent: 5060042 (1991-10-01), Shinohara et al.
patent: 5124544 (1992-06-01), Ohzu
patent: 5191399 (1993-03-01), Maegawa et al.

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