Photoelectic conversion element with islands

Details Photoelectic conversion element with islands Photoelectic conversion element with islands

1995-09-01

1997-09-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257446, 257448, 257435, 257457, H01L 3100

Patent

active

056635761

ABSTRACT:
A photoelectric conversion element having an improved 8 characteristic is constructed of an insulation film and a photoelectric conversion film formed as islands. These films are stacked successively on a shield film formed on a transparent insulating substrate. Electrodes that connect the islands of the photoelectric conversion film together are formed at prescribed intervals and in prescribed widths so that each of the electrodes covers the upper surface of a different end portion of the photoelectric conversion film. A low resistance film is provided between the photoelectric conversion film and each of the electrodes.

REFERENCES:
patent: 5177577 (1993-01-01), Taniguchi et al.
patent: 5184200 (1993-02-01), Yamanobe
patent: 5243202 (1993-09-01), Mori et al.
patent: 5294811 (1994-03-01), Hoyama et al.

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