Photoelastic stress sensor

Details Photoelastic stress sensor Photoelastic stress sensor

1996-01-17

1998-03-17

Dombroske, George M.

Measuring and testing

Specimen stress or strain, or testing by stress or strain...

By loading of specimen

73760, G01L 124

Patent

active

057289441

ABSTRACT:
A stress detection apparatus is provided. A piece of semiconductor grade, ngle crystal silicon mounted on the material is illuminated by an infrared source with radiation having a wavelength in the range of 800-1100 nanometers. An infrared detector monitors the photoelastic effects of illuminating the single crystal silicon with the radiation.

REFERENCES:
patent: 4353649 (1982-10-01), Kishii
patent: 4789236 (1988-12-01), Hodor et al.
patent: 4939368 (1990-07-01), Brown
patent: 5426498 (1995-06-01), Brueck et al.
patent: 5438879 (1995-08-01), Reda
patent: 5546811 (1996-08-01), Rogers et al.

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