Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-04-05
2010-02-16
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE27132, C257SE27133
Reexamination Certificate
active
07662658
ABSTRACT:
A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface latter has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017atoms per cm3to about 1×1019atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.
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Mauritzson Richard A.
Mouli Chandra
Rhodes Howard E.
Coleman W. David
Dickstein & Shapiro LLP
McCall-Shepard Sonya D
Micro)n Technology, Inc.
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