Semiconductor device manufacturing: process – Making regenerative-type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2006-10-17
2006-10-17
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Bidirectional rectifier with control electrode
C438S181000
Reexamination Certificate
active
07122408
ABSTRACT:
A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017atoms per cm3to about 1×1019atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.
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Mauritzson Richard A.
Mouli Chandra
Rhodes Howard E.
Blum David S.
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
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