Photodiode with self-aligned implants for high quantum...

Details Photodiode with self-aligned implants for high quantum... Photodiode with self-aligned implants for high quantum...

2007-03-27

2007-03-27

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S060000

Reexamination Certificate

active

11206125

ABSTRACT:
A pinned photodiode with a pinned surface layer formed by a self-aligned angled implant is disclosed. The angle of the implant may be tailored to provide an adequate offset between the pinned surface layer and an electrically active area of a transfer gate of the pixel sensor cell. The pinned surface layer is formed by employing the same mask level as the one employed for the formation of the photodiode region, and then implanting dopants at angles other than zero degrees.

REFERENCES:
patent: 2004/0201072 (2004-10-01), Rhodes
patent: 2005/0230721 (2005-10-01), Patrick

Affiliated with

Also associated with

Rating

Photodiode with self-aligned implants for high quantum... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photodiode with self-aligned implants for high quantum..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photodiode with self-aligned implants for high quantum... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3769791