Photodiode with improved charge capacity

Details Photodiode with improved charge capacity Photodiode with improved charge capacity

2011-03-22

2011-03-22

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S056000, C438S057000, C438S070000, C438S079000, C438S091000, C257S457000, C257S463000, C257S465000

Reexamination Certificate

active

07910394

ABSTRACT:
A method for forming a photodiode cathode in an integrated circuit imager includes defining and implanting a photodiode cathode region with a photodiode cathode implant dose of a dopant species and defining and implanting an edge region of the photodiode cathode region with a photodiode cathode edge implant dose of a dopant species to form a region of higher impurity concentration than the photodiode cathode impurity concentration.

REFERENCES:
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patent: 6204087 (2001-03-01), Parker et al.
patent: 6455345 (2002-09-01), Tanabe
patent: 2002/0048837 (2002-04-01), Burke et al.
patent: 2005/0224844 (2005-10-01), Mizuguchi
patent: 1020060020850 (2006-03-01), None
Segal (“3D-A new architecture for solid-state radiation detectors”, ICFA Instrumentation Bulletin, pp. 30-48, vol. 14, 1997).

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