Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Reexamination Certificate
2011-05-24
2011-05-24
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
C257S452000, C257S458000, C257S656000, C257S459000, C257S461000, C257SE31061, C257SE29336, C257SE31110
Reexamination Certificate
active
07948006
ABSTRACT:
A photodetector with an improved electrostatic discharge damage threshold is disclosed, suitable for applications in telecommunication systems operating at elevated data rates. The photodetector may be a PIN or an APD fabricated in the InP compound semiconductor system. The increased ESD damage threshold is achieved by reducing the ESD induced current density in the photodetector by a suitable widening of the contact at a critical location, increasing the series resistance and promoting lateral current spreading by means of a current spreading layer.
REFERENCES:
patent: 6753214 (2004-06-01), Brinkmann et al.
patent: 6835984 (2004-12-01), Derkits, Jr. et al.
Sun et al., “Nonlinearity in ESD robust InGaAs p-i-n photodiode” published in IEEE Transactions on Electron Devices, vol. 52, Issue 7, pp. 1508-1513,Jul. 2005.
Pan Zhong
Venables David
JDS Uniphase Corporation
Lopez Fei Fei Yeung
Pequignot Matthew A.
Pequignot & Myers LLC
Tran Minh-Loan T
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