Photodiode that reduces the effects of surface recombination...

Details Photodiode that reduces the effects of surface recombination... Photodiode that reduces the effects of surface recombination...

2006-09-12

2006-09-12

Eckert, George (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C438S057000, C438S305000, C257S290000

Reexamination Certificate

active

07105906

ABSTRACT:
The loss of photogenerated electrons to surface electron-hole recombination sites is minimized by utilizing a first p-type surface region to form a depletion region that functions as a first barrier that repels photogenerated electrons from the surface recombination sites, and a second p-type surface region that provides a substantial change in the dopant concentration.

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