Photodiode structure having mask to reduce leakage current

Details Photodiode structure having mask to reduce leakage current Photodiode structure having mask to reduce leakage current

1998-08-03

2000-10-31

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257435, 257461, H01L 3106, H01L 29768

Patent

active

061406708

ABSTRACT:
The invention provides a photodiode structure having a first conductive type substrate and at least an isolation region, the photodiode structure comprising a doped second conductive type region, wherein the doped second conductive type region is formed in the substrate at a distance from the neighboring isolation region, and a mask layer covering at least a peripheral strip near the edge of the isolation region so that the doped second conductive type region is exposed.

REFERENCES:
patent: 4717945 (1988-01-01), Yusa et al.

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