Photodiode structure augmented with active area photosensitive r

Details Photodiode structure augmented with active area photosensitive r Photodiode structure augmented with active area photosensitive r

1997-11-24

1999-11-09

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257446, 257448, 257457, H01L 2714

Patent

active

059820110

ABSTRACT:
A photodiode structure augmented with active area photosensitive regions is used for detecting impinging radiation. The photodiode includes a semiconductor base layer doped with impurities of a first carrier type, a field oxide layer disposed upon the base layer with an opening formed therethrough, a plurality of auxiliary oxide layers wherein each is separately disposed upon the base layer, and a semiconductor diffusion layer doped with impurities of a second carrier type arranged upon the base layer and in contact with the oxide layers. When the photodiode is electrically energized, a plurality of integral photosensitive regions is created within the depletion region to facilitate the detection of impinging radiation at an increased quantum efficiency.

REFERENCES:
patent: 4717946 (1988-01-01), Godfrey
patent: 4972243 (1990-11-01), Sugawa et al.

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