Photodiode structure and image pixel structure

Details Photodiode structure and image pixel structure Photodiode structure and image pixel structure

2006-03-07

2006-03-07

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257SE27133

Reexamination Certificate

active

07009227

ABSTRACT:
A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacent photodiodes and provides good substrate to surface pinned layer contact without the presence of n− type dopant ions and due to the presence of p-type dopant ions. As a result, the size of the imager can be reduced and the photodiodes of the two adjacent pixels have increased capacitance.

REFERENCES:
patent: 5286990 (1994-02-01), Hynecek
patent: 6140630 (2000-10-01), Rhodes
patent: 6204524 (2001-03-01), Rhodes
patent: 6310366 (2001-10-01), Rhodes et al.
patent: 6326652 (2001-12-01), Rhodes
patent: 6333205 (2001-12-01), Rhodes
patent: 6376868 (2002-04-01), Rhodes

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