Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-05-05
1995-07-04
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257464, 257446, H01L 2714, H01L 21205, H01L 27146
Patent
active
054303214
ABSTRACT:
A photodiode structure for the detection of radiation comprises a semiconductor base layer of p-type conductivity with a high doping density, an epitaxial layer of p-type conductivity with a relatively low doping density, areas of n-type conductivity and oxide layers covering the areas of n-type conductivity. The oxide layers comprise doping impurities of the same conductivity type as the areas below them. The doping density in the areas of n-type conductivity decrease towards the junction with the epitaxial layer. Due to this decrease in doping density, an electric field gradient is produced which guides the charge carriers to the junction. The generation of a field gradient and the creation of a surface charge result in an improved quantum efficiency. The invention is preferably used in photodiode arrays. Due to the gradient in doping density in the epitaxial layer, charge carriers are reflected at the interface between the layers and so that cross talk between adjacent diodes in a photodiode array is reduced. According to a preferred method for manufacturing a photodiode structure of the invention, the doping of the photodiode structures is performed by ion implantation.
REFERENCES:
patent: 4107722 (1978-08-01), Chamberlain
Sensors And Actuators Jul. 1985, pp. 177-187 "Silicon Optical Sensors Fabricated Through Masked Ion Implantation".
Solid-State Electronics Jan. 1987 No. 1 pp. 89-92 "Stable, High Quantum Efficiency, UV-Enhanced Silicon Photodiodes By Arsenic Diffusion".
Patent Abstracts of Japan vol. 012, No. 342 (E-658) 14 Sep. 1988 & JP-A-63 102 380 (Fujitsu LTD) 7 May 1988 *abstract*.
Patent Abstracts of Japan vol. 004, No. 032 (E-002) 19 Mar. 1980 & JP A-55 003 633 (Sharp Corp) 11 Jan. 1980 *abstracts*.
Hewlett--Packard Company
Jackson Jerome
Monin, Jr. Donald L.
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