Photodiode stack for photo MOS relay using junction...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257SE31095, C257S461000

Reexamination Certificate

active

07615396

ABSTRACT:
A novel photodiode stack which comprising of more than 3 photodiodes connected in series to produce a large photovoltaic voltage in the presence of light using junction isolation technology.

REFERENCES:
patent: 3551761 (1970-12-01), Ruoff et al.
patent: 4873202 (1989-10-01), Akiyama
patent: 5151602 (1992-09-01), Idaka et al.
patent: 5299046 (1994-03-01), Spaeth et al.
patent: 6271943 (2001-08-01), Goossan
patent: 6750523 (2004-06-01), Blanchard
patent: 6806482 (2004-10-01), Yamagishi
patent: 6987268 (2006-01-01), Kuijk et al.

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