Photodiode passivation technique

Details Photodiode passivation technique Photodiode passivation technique

2006-04-18

2006-04-18

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S754000, C257S444000

Reexamination Certificate

active

07030032

ABSTRACT:
A method for passivating a photodiode so as to reduce dark current, Isdark, due to the exposed semiconductor material on the sidewall of the device. The method includes etching away sidewall surface damage using a succinic acid-hydrogen peroxide based sidewall etch. This is followed by a subsequent hydrochloric acid (HCl)-based surface treatment which completes the surface treatment and reduces the dark current Isdark. Finally, a polymer coating of benzocyclobutene (BCB) is applied after the surface treatment to stabilize the surface and prevent oxidation and contamination which would otherwise raise the dark current were the diodes left with no coating. The BCB is then etched away from the contact pad areas to allow wirebonding and other forms of electrical contact to the diodes. Such method effectively stabilizes the etched surfaces of photodiodes resulting in significantly reduced and stable dark current.

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