Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-06-06
2006-06-06
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S464000, C257S184000, C257S081000, C257S434000, C257S680000, C438S048000, C438S081000
Reexamination Certificate
active
07057255
ABSTRACT:
A photodiode (PD chip) includes a substrate, an absorption layer, a p-n junction in the absorption layer, a passivation film for protecting the end of the p-n junction, a p-electrode, and an n-electrode. The passivation film is covered with a protective layer composed of an insulative resin and having a thickness larger than that of the passivation film such that the passivation film of the PD chip fixed to the Si wafer and hence the p-n junction are not damaged or contaminated when an Si wafer including a number of horizontally and vertically arranged chip units, each having a V-groove for fixing an optical fiber, a marker, and a metallized pattern, is diced. Thus, a low-cost optical receiver module that does not generate dark current can be produced.
REFERENCES:
patent: 6521968 (2003-02-01), Kuhara et al.
patent: 2002/0033491 (2002-03-01), Kuhara et al.
patent: 2000-105327 (2000-04-01), None
patent: 8-264748 (2000-10-01), None
Kuhara Yoshiki
Yamabayashi Naoyuki
Fish & Richardson P.C.
Flynn Nathan J.
Sumitomo Electric Industries Ltd.
Wilson Scott R
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