Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-06-21
2011-06-21
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S461000, C257SE31115, C257SE27133, C136S256000
Reexamination Certificate
active
07964925
ABSTRACT:
Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of the photodiode module. In one embodiment of the present invention, a photodiode module includes a semiconductor structure having a p-region and an n-region. The photodiode module further includes a photonic crystal having a surface positioned adjacent to the semiconductor structure. A diffraction grating of the photodiode module may be positioned and configured to selectively couple light incident on the diffraction grating to a dielectric-surface mode associated with the surface of the photonic crystal. In another embodiment of the present invention, a photodiode apparatus includes multiple, stacked photodiode modules, each of which is configured to selectively absorb light at a selected wavelength or range of wavelengths.
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Blackstock Jason
Fattal David
Stewart Duncan
Hewlett--Packard Development Company, L.P.
Wilczewski Mary
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