Photodiode having heterojunction

Details Photodiode having heterojunction Photodiode having heterojunction

1986-12-04

1988-11-08

Sikes, William L.

H01L 3300

Patent

active

047836890

ABSTRACT:
A semiconductor photodiode comprising an N+ InP substrate 6, a similar InP substrate layer 7, an N- InGaAs layer 8, a thin N-type InP layer 9, an N- InP layer 10 and a P+ InP region 11 forming the top of the photodiode. When reversed biased, the high electric field at the hetero-junction between the N- InGaAs and the N-type InP cause holes to tunnel through the band-gap difference barrier thereby eliminating slow trapping states at the hetero-interface.

REFERENCES:
patent: 4382265 (1983-05-01), Pearsall

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