Photodiode having an InGaAs layer with an adjacent InGaAsP p-n j

Details Photodiode having an InGaAs layer with an adjacent InGaAsP p-n j Photodiode having an InGaAs layer with an adjacent InGaAsP p-n j

1980-10-09

1983-06-28

Edlow, Martin H.

357 13, 357 16, H01L 2990, H01L 29161, H01L 2914

Patent

active

043908896

ABSTRACT:
A photodetector useful between 1.0 and 1.6 microns and having an InGaAs layer with an adjacent InGaAsP p-n junction disposed on the InGaAs layer is described.

REFERENCES:
patent: 4231049 (1980-10-01), Pearsall
patent: 4323911 (1982-04-01), Campbell et al.
K. Iga, T. Kambayashi, K. Wakao and Y. Sakamoto "GaInAsP/InP Facet Lasers with Chemically-Etched End Mirrors", Japanese Journal of Applied Physics, vol. 18, No. 10 (1979), pp. 2035-2036.
M. A. Pollack, R. E. Nahorg, J. C. DeWinter and A. A. Ballman, "Liquid Phase Epitaxial In.sub.l-x Ga.sub.x As.sub.y P.sub.l-y Lattice Matched to <100> InP Over the Complete Wavelength Range 0.92 .ltoreq..times..ltoreq.1.65 .mu.m", Applied Physics Letters, vol. 33, No. 4 (1978), pp. 314-316.
K. Nishida, K. Tagucki, and Y. Matsumoto, "InGaAsP Heterostructure Avalanche Photodiodes with High Avalanche Gain", Applied Physics Letters, vol. 35, No. 3 (1979), pp. 251-253.
T. P. Pearsall and M. Papuchon, "The Ga.sub.0.47 In.sub.0.53 As Homojunction Photodiode--A New Avalanche Photo Detector in the Near Infrared Between 1.0 and 1.6 .mu.m", Applied Physics Letters, vol. 33, No. 7 (1978), pp. 640-642.
T. P. Lee, C. A. Burrus, A. G. Dentai and K. Ogawa, "Small Area InGaAs/InP p-i-n Photodiodes: Fabrication, Characteristics and Performance of Devices in 274 Mb/s and 45 Mb/s Lightwave Receivers at 1.31 .mu.m Wavelength", Electronic Letters, vol. 16, No. 4 (1980), pp. 155-156.

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