Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1994-01-25
1995-09-12
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 77, 257449, 257454, 257456, H01L 2714, H01L 3100
Patent
active
054499240
ABSTRACT:
A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a Schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydrogenated amorphous silicon film.
REFERENCES:
patent: 4811069 (1989-03-01), Kakinuma et al.
patent: 4982246 (1991-01-01), Polasko et al.
patent: 4999693 (1991-03-01), Yamazaki et al.
Hur Chang W.
Park Young H.
Sung Kang H.
Goldstar Electron Co. Ltd.
Mintel William
Tran Minhloan
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