Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-06-07
2011-06-07
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S434000, C257S760000, C438S048000, C438S142000, C438S208000
Reexamination Certificate
active
07956432
ABSTRACT:
A photodiode includes a substrate having a first semiconductor type surface region on at least a portion thereof, and a second semiconductor type surface layer formed in a portion of the surface region. A multi-layer anti-reflective coating (ARC) is on the second semiconductor type surface layer, wherein the multi-layer ARC comprises at least two different dielectric layers. A layer resistant to oxide etch is above a peripheral portion the multi-layer ARC. Further layers are above the layer resistant to oxide etch, and thereby above the peripheral portion the multi-layer ARC. A window extends down to the multi-layer ARC. A photodiode region is formed by a pn-junction of the first semiconductor type surface region and the second semiconductor type surface layer.
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Benzel Phillip J.
Jones Joy
Kalnitsky Alexander
Ratnam Perumal
Zheng Dong
Fliesler & Meyer LLP
Green Telly D
Intersil America's Inc.
Smith Zandra
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