Photodiode for imaging system and method of making

Details Photodiode for imaging system and method of making Photodiode for imaging system and method of making

2007-08-14

2007-08-14

Porta, David (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

Reexamination Certificate

active

10955295

ABSTRACT:
A photo-detector having a common electrode comprising a conductive material configured in a non-solid pattern in which there are gaps where there is no conductive material. In one embodiment, the distance (d) or (d′) between conductive portions of the common electrode is in a range from about 3 microns to about 5 microns. Alternatively, in one embodiment, the patterned common electrode covers between 20% to 70% of the surface of the respective photosensor element. A method for making the same is also provided.

REFERENCES:
patent: 5610403 (1997-03-01), Kingsley et al.
patent: 5648654 (1997-07-01), Possin
patent: 2003/0043967 (2003-03-01), Aufrichtig et al.

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