Photodiode chip having a high limit frequency

Details Photodiode chip having a high limit frequency Photodiode chip having a high limit frequency

2006-10-18

2011-10-25

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31111, C327S514000

Reexamination Certificate

active

08044481

ABSTRACT:
The invention relates to a photodiode chip which has a great limit frequency and a junction from the active photodiode area of a photodiode mesa to the output pad of the high-frequency output of the photodiode chip. The aim of the invention is to further increase the bandwidth factor of photodiode chips. Said aim is achieved by establishing the connection from the photodiode mesa to the output pad by means of a high-resistance wire with impedance (Zleitung) which is spread across the length thereof and is at least as high as the load impedance (Zlast) effective at the output pad.

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