Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-05-03
2011-05-03
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S463000, C257SE31057, C257SE33046, C438S087000
Reexamination Certificate
active
07936038
ABSTRACT:
Disclosed herein is a photodiode cell, including: a first-type substrate; a second-type epitaxial layer disposed on the first-type substrate; heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer; and heavily-doped first-type layers, each having a narrow and shallow section, disposed on the second-type epitaxial layer and formed between the heavily-doped second-type layers, wherein the first-type and second-type have opposite doped states.
REFERENCES:
patent: 5767538 (1998-06-01), Mullins et al.
Go Chae Dong
Jeong Ha Woong
Kwon Kyoung Soo
Park Deuk Hee
Blakely , Sokoloff, Taylor & Zafman LLP
Diallo Mamadou
Richards N Drew
Samsung Electro-Mechanics Co.
LandOfFree
Photodiode cell structure of photodiode integrated circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photodiode cell structure of photodiode integrated circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photodiode cell structure of photodiode integrated circuit... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2680579