Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1995-08-29
1997-05-13
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257443, 257446, 257448, 257465, H01L 3100
Patent
active
056295502
ABSTRACT:
A photodiode built-in semiconductor device is provided that can prevent internal peripheral circuits from erroneously operating due to incident light entering slantingly, or not perpendicular to a top surface of the semiconductor chip. A semiconductor chip 20 includes a photodiode and its peripheral circuits. The region except for the photodiode is covered with a light shielding film 22 of aluminum metallization. An isolation region (P.sup.+) 23 is arranged at an outermost portion of the chip. A dummy island 24 is formed so as to surround the entire portion of the chip 20. An N.sup.+ -type low resistance region 25 is formed in the surface of the dummy island 24. The dummy photodiode is formed by applying a reverse bias potential across the PN junction defined between the isolation region 23 and the dummy island 24.
REFERENCES:
patent: 4691101 (1987-09-01), Leonard
patent: 4733264 (1988-03-01), Hatase et al.
patent: 4998013 (1991-03-01), Epstein et al.
patent: 5182625 (1993-01-01), Miyake et al.
patent: 5243192 (1993-09-01), Miyauchi et al.
Mita Keiji
Shiroma Osamu
Mintel William
Sanyo Electric Co,. Ltd.
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