Photodiode array having reduced dead space

Details Photodiode array having reduced dead space Photodiode array having reduced dead space

2006-11-14

2006-11-14

Richards, N. Drew (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S448000, C257S457000, C257S459000, C257SE31115, C257SE27133

Reexamination Certificate

active

07135750

ABSTRACT:
A photodiode array includes a first photodiode and at least a second photodiode. The first photodiode includes a first active area, a first anti-reflective coating area, and a first residual polysilicon ring. The first anti-reflective coating area and the first residual polysilicon ring are formed asymmetrically over the first active area. The second photodiode includes a second active area, a second anti-reflective coating area, and a second residual polysilicon ring. The second anti-reflective coating area and the second residual polysilicon ring are formed asymmetrically over the second active area. The first anti-reflective coating area is formed over a region of the first active region adjacent to the second photodiode, and the second anti-reflective coating area is formed over a region of the second active region adjacent to the first photodiode.

REFERENCES:
patent: 5204520 (1993-04-01), Green
patent: 6864475 (2005-03-01), Aita et al.
patent: 2006/0132633 (2006-06-01), Nam et al.

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